Electro-optic measurement of carrier mobility in an organic thin-film transistor

摘要

We have used an electro-optic technique to measure the position-dependentinfrared absorption of holes injected into a thin crystal of the organicsemiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in afield-effect transistor. By applying square-wave voltages of variable frequencyto the gate or drain, one can measure the time it takes for charges toaccumulate on the surface, and therefore determine their mobility.